A CMOS image sensor uses photodiodes or photogate transistors as the light detecting element. In contrast to CCD sensors, each photo element is individually addressable in a row and column matrix, similar to a DRAM structure, which allows partial image readout (windowing, area of interest). Windowing is especially helpful in motion detection and object tracking algorithms. It reduces intermediate storage memory requirements and allows higher frame rates.
Image quality of modern CMOS sensors is almost comparable to CCD devices, with slightly higher noise levels, mainly caused by the integration of analog and digital circuitry on the same chip. CMOS however does not suffer from blooming and smearing effects that are caused by charge leakage in CCD devices. CMOS sensors can be built with logarithmic characteristics, achieving a dynamic range up to 100 dB and more, which is essential for many 'outdoor' applications like object detection and tracking in a vehicle.
Color sensors include a Bayer color filter on top of the inherently monochrome sensor array. The analog pre-processor is complemented with gamma correction circuits and with a RGB to YCrCb matrix. An additional ADC converts the CrCb color difference signal. |