涓婚: ST鎵嬫満搴旂敤鐨勫垱鏂扮殑瀛樺偍鍣ㄨВ鍐虫柟妗� |
鍦ㄧ嚎闂瓟: |
[涓绘寔浜猴細ChinaECNet] |
鍚勪綅鍚紬锛堢綉鍙嬶級锛屼笂鍗堝ソ锛佹杩庡弬鍔犱腑鐢电綉鍦ㄧ嚎搴ц皥銆備粖澶╋紝鎴戜滑鏈夊垢閭€璇峰埌ST鍏徃鐨勪笓瀹跺氨鈥淪T鎵嬫満搴旂敤鐨勫垱鏂扮殑瀛樺偍鍣ㄨВ鍐虫柟妗堚€濅妇琛屽湪绾垮骇璋堛€傚湪搴ц皥涓紝鎮ㄥ彲灏辨偍鍏冲績鐨勯棶棰樹笌ST鍏徃鐨勪笓瀹跺湪绾胯繘琛岀洿鎺ャ€佸疄鏃剁殑瀵硅瘽浜ゆ祦銆備腑鐢电綉琛峰績甯屾湜閫氳繃澶у鐨勫叡鍚屽姫鍔涳紝涓嶄粎鑳藉澧炶繘鍚勪綅鍚紬锛堢綉鍙嬶級瀵光€淪T鎵嬫満搴旂敤鐨勫垱鏂扮殑瀛樺偍鍣ㄨВ鍐虫柟妗堚€濈殑浜嗚В鍜屾帉鎻★紝鑰屼笖鑳藉涓哄ぇ瀹朵簨涓氱殑鍙戝睍甯︽潵瑁ㄧ泭銆� |
[2006-5-17 10:10:16] |
[涓绘寔浜猴細ChinaECNet] |
鎴戜滑宸茬粡杩涘叆闂瓟闃舵濡傛灉鍚紬鎯抽噸娓╂紨璁叉垨鍐呭鍙互鐐瑰嚮涓嬮潰鈥滃洖椤炬紨绀衡€濋噸鐪嬫紨璁层€� |
[2006-5-17 10:19:06] |
[闂細wuxinjiang] |
璇烽棶鎰忔硶鍗婂浣撳叕鍙窷OR闂瓨鐩墠宸茬粡搴旂敤浜庡摢浜涙墜鏈哄巶鍟嗭紵 |
[绛旓細Benny] |
鎰忔硶鐩墠鐨勪骇鍝佸凡缁忓箍娉涘簲鐢ㄤ簬涓栫晫鍓嶏紤锛愪綅鐨勬墜鏈哄巶鍟嗭紝鍦ㄤ腑鍥藉墠锛曚綅鐨勬墜鏈哄巶鍟嗛兘鏈変笌锛筹即銆€鍚堜綔 |
[2006-5-17 10:23:39] |
[涓绘寔浜猴細ChinaECNet] |
鍦ㄦ鍥炵瓟闂鐨勪笓瀹舵槸ST鍏徃鐨勶細Benny Dou銆丅onny zhang銆丣ames Zhu銆並evin
Zhu銆丆hampion Tao鍜孏avin YIN銆� |
[2006-5-17 10:26:04] |
[闂細andypclau] |
Please compare the price and performance (power,
speed) of NOR and NAND MCP. |
[绛旓細Benny] |
NOR Flash will be applied in program adn Nand will applied in Data storage
.
For ST ,>1Gbit we have Nand Flash solution <=512Mbit
,we have NOR Flash solution |
[2006-5-17 10:26:06] |
[闂細fzhuo] |
NOR闂瓨鍜孨AND闂瓨鍦ㄧ粨鏋勫拰浠锋牸涓婃湁浣曞樊鍒�?NOR鍜孨AND闂瓨涓昏鐢ㄥ湪閭g棰嗗煙? |
[绛旓細Gavin] |
NOR鍜孨AND 鍦ㄧ粍鎴愬瓨鍌ㄥ崟鍏冪殑缁撴瀯涓嶅悓銆侼AND瑕佹瘮NOR鍏锋湁鏇撮珮鐨勫閲�/浠锋牸姣斻€�
NOR涓昏鐢ㄤ簬瀛樺偍浠g爜銆�
NAND涓昏鐢ㄤ簬瀛樺偍鏁版嵁銆� |
[2006-5-17 10:26:23] |
[闂細cmqpostee] |
鎴戞兂闂棶 ST FLASH涓竴涓狟ANK鍜屼袱涓狟ANK鐨勫尯鍒� |
[绛旓細Benny] |
涓や釜锛肌锛极缁撴瀯鍏佽瀵癸鸡锛肌锛筹绩鍚屾椂杩涜璇讳笌鍐欐搷浣滐紝鍥犱负瀵瑰悓涓€涓饥锛★籍锛紝涓€娆″彧鑳借繘琛岃鎴栧啓鎿嶄綔 |
[2006-5-17 10:28:33] |
[闂細fzhuo] |
1Gb NOR闂瓨澶х害鐨勪环浣嶆槸澶氬皯?浣曟椂鑳芥彁渚涙牱鍝�? |
[绛旓細Benny] |
璁″垝鏄庡勾锛憋紤杩涜鏍峰搧锛屼环鏍间細渚濇嵁甯傚満闇€姹� |
[2006-5-17 10:29:51] |
[闂細zw168] |
璇疯В閲奝SRAM鐨勭粨鏋勫拰鎬ц兘鐗圭偣.瀹冨拰SRAM鏈変綍涓嶅悓鍜屼紭鐐�? |
[绛旓細Gavin] |
PSRAM閲囩敤浜咲RAM鐨刢ore锛屽唴閮ㄨ嚜琛岃繘琛屽埛鏂版潵淇濇寔鏁版嵁鐨勬湁鏁堟€э紝PSRAM閲囩敤SRAM鐨勬帴鍙c€�
杩欐牱锛屽鐢ㄦ埛鏉ヨ鎺ュ彛鏄竴鏍风殑銆�
PSRAM鍦ㄥ姛鑰椾笂瑕佹瘮SRAM澶т竴浜涳紝璇诲彇閫熷害涓婄◢寰參涓€浜涳紙鐜板湪宸茬粡鍑犱箮涓€鏍蜂簡銆傦級
鍙﹀锛孭SARM鍦ㄤ笂鐢甸『搴忎笂鏈夎姹傦紙瑙乨atasheet锛夛紝鑰孲RAM娌℃湁銆� |
[2006-5-17 10:32:17] |
[闂細andy123456] |
璇烽棶ST 鐨� NOR FLASH 璺熷叾浠栧搧鐗屾瘮杈� 鏈€澶х殑浼樺娍鍦ㄥ摢閲岋紵 |
[绛旓細Benny] |
锛筹即鐩墠鍗犲競鍦烘墜鏈轰唤棰濓紝瓒呰繃25%锛屽苟涓斾笌鏈湡骞挎硾閲囩敤鐨凪TK,PHILIPS,INFINION, QUALCOMM,SKYWORKS
锛岋即锛╃瓑骞冲彴閮芥湁娣卞眰鍚堜綔 |
[2006-5-17 10:32:23] |
[闂細elp02yd] |
璇烽棶65nm flash浣曟椂骞翠骇 |
[绛旓細Benny] |
棰勮鍦ㄦ槑骞翠竴瀛e害 |
[2006-5-17 10:33:52] |
[闂細elmer] |
鎯抽棶涓畝鍗曢棶棰橈紝浠€涔堟槸NOR鍜孨AND MEMORIES锛� |
[绛旓細Gavin] |
NOR鍜孨AND 鏄袱绉嶄笉鍚岀殑FLASH宸ヨ壓锛孨OR涓昏鍦�8Mb锛嶏紞512Mb涔嬮棿锛岀敤浜庡瓨鍌ㄤ唬鐮佸拰鏁版嵁銆備富瑕佺殑鍘傚晢鏈夛細
INTEL, ST, SPANSION.
NAND 涓昏鍦�128Mb锛嶏紞16Mb涔嬮棿锛岀敤浜庡瓨鍌ㄦ暟鎹€備环鏍间究瀹溿€備富瑕佺殑
鍘傚晢鏈塖AMSUNG, ST, HYNIX |
[2006-5-17 10:35:35] |
[闂細hanker_chen] |
What kind of memory configurations are fit
for 3G basic phone,feature phone and smart phone applications respectively,
thanks! |
[绛旓細Benny] |
鎴戜滑鎻愪緵锛集锛诧紩锛戯紥锛璪it+128/64Mbit MCP ,鐜板湪骞挎硾搴旂敤浜庣幇鏈夌殑锛擄姬鎴栨槑鎴�2.5G鏂规 |
[2006-5-17 10:35:43] |
[闂細charlicheng] |
90nm NOR闂瓨鑳借揪鍒�133MHz鐨勯€熷害,65nm NOR闂瓨鐨勯€熷害棰勮鑳借揪鍒板楂�?姝ゅ,杩樻湁浠€涔堜紭鐐�? |
[绛旓細Benny] |
锛栵紩nm浼氳揪鍒扮洰鐨勶紤锛栵紪锛绩锛猴紝銆€鍐欏叆閫熷害杈惧埌1000锛饥锛忥汲锛屽叏闈�1.8V鏂规 |
[2006-5-17 10:38:29] |
[闂細hanker_chen] |
Which is more cost competitive between MLC
and SLC锛� |
[绛旓細Benny] |
MLC product cost will be lower about 30% VS SLC.
as MLC means 2b/c ,enlarge flash capacity without increasing die size.thanks |
[2006-5-17 10:39:51] |
[闂細druidmu] |
璇烽棶涓撳, NOR+SDRAM缁勫悎鍜孨OR+PSRAM鐨勭粍鍚堝湪鎬ц兘鍜屼环鏍间笂鏈変綍鐗硅壊?鏈夋棤鍙兘鍓嶈€呰鏇夸唬鍚庤€�? |
[绛旓細Benny] |
涓ょ缁勫悎鐨勯€夊彇锛屽湪鐩墠鐪嬫潵锛屾洿鍐冲畾浜庯紝鎵嬫満骞冲彴鎻愪緵鍟嗘槸鍚︽敮鎸侊汲锛わ疾锛★辑锛屽綋鐒跺湪浠锋牸涓婏籍锛疾锛嬶汲锛わ疾锛★辑鐨勭粍鍚堜細鏇存湁绔炰簤鍔涗竴浜涳紝璋㈣阿 |
[2006-5-17 10:42:07] |
[闂細chen903wei] |
ST鐨凬OR闂瓨閲囧彇浜嗛偅浜涙帾鏂芥潵淇濊瘉鎵嬫満鏁版嵁鐨勫畨鍏ㄦ€у拰淇濆瘑鎬�? |
[绛旓細Gavin] |
鎵嬭鏁版嵁鐨勫畨鍏ㄦ€у拰淇濆瘑鎬т緷璧栦簬FLASH鏈韩鍜屾枃浠剁郴缁熺殑鍋ュ.鎬с€�
ST NOR 閲囩敤浜嗕互涓嬫帾鏂斤細
1銆俠lock淇濇姢鍖呮嫭杞欢淇濇姢鍜岀‖浠朵繚鎶�
2銆侽TP鍖哄煙锛屼竴娆℃€х紪绋嬨€�
3銆�64bit鐨勫叏鐞冨敮涓€璇嗗埆鐮� |
[2006-5-17 10:43:54] |
[闂細charlicheng] |
鏈夎抗璞¤〃鏄�,鎵嬫満鐨勯棯瀛樻鍦ㄤ粠NOR杩囧害鍒癗AND,ST瀵规鏈変綍鐪嬫硶鍜屽绛�? |
[绛旓細James] |
ST has forecasted and detected the trend that NAND demand is up, and
NOR demand is down in the application of mobile phone.
But, it takes time for the migration because of baseband. Now, only few
baseband suppliers can provide with NAND boot, such as Broadcom, Freescale,
MTK etc.
So, ST now will continue to support high desity NOR MCP, meanwhile, NAND
MCP is in the development. |
[2006-5-17 10:44:13] |
[闂細andypclau] |
costing and performance (speed, capacity,
power) comparison between NOR and NAND MCP |
[绛旓細Champion] |
NOR Read/write speed:
Initial/random access:~70/85/90ns
Sequential access: ~14ns (burst mode), 20/25ns (page mode)
program:10us / word ,Can be access word by word.
buffer program: 340us/32word
For NAND read/write speed:
Initial/random access:~12us
Sequential access:~50ns
program:200us / 512byte, Only access by page
For Capacity:
NOR, 16Mbit~1Gbit
NAND, 128Mbit/256Mbit/512Mbit for small page NAND and 1Gbit/2Gbit/4Gbit
for large page NAND
For power comsumption:
NOR operating current for read/program: about 15~20mA/10mA(typ.)
NAND operating current for read/program:8~10mA(typ.)
Overall,NOR with high read speed for XIP,NAND with high speed programing
throughtput. |
[2006-5-17 10:44:38] |
[闂細ttmm] |
鎹紶,ST鍜孖ntel閽堝鎵嬫満瀛樺偍瀛愮郴缁燂紝鍒跺畾浜哊OR闂瓨瑙勮寖,璇烽棶杩欐槸鍚﹀甫鏈夋帓瀹冩€�?鑳藉惁鎴愪负NOR鐨勮涓氳鑼�? |
[绛旓細Benny] |
锛筹即鍜岋缉锛即锛ワ棘鍚堜綔鍒惰鐨勮鑼冿紝宸插崰鍏ㄧ悆甯傚満锛曪紣锛呬唤棰濓紝鏄渶澶ч檺搴︾殑鍚堜綔瑙勮寖锛屼笖鍧囬噰鐢紮锛恘m鎶€鏈紝鏄洰鍓嶆渶鍏堣繘锛屼篃鏈€娴佽鐨勮鑼冿紝璋㈣阿 |
[2006-5-17 10:46:08] |
[涓绘寔浜猴細ChinaECNet] |
鍚勪綅瑙備紬锛岀幇鍦ㄧ敤鎴锋彁闂緢韪婅穬锛屼笓瀹舵鍦ㄩ€愪竴鍥炵瓟銆傝鑰愬績绛夊緟鎮ㄩ棶棰樼殑绛旀锛屽悓涓€闂璇蜂笉瑕佸娆℃彁浜ゃ€� |
[2006-5-17 10:46:55] |
[闂細tannianbo] |
璇烽棶涓撳,涓轰簡婊¤冻鎵嬫満瀵筍MS,MMS,鍜屽浘鍍忎紶閫佺瓑瑕佹眰,鏍规嵁浣犱滑鐨勭粡楠�,鎵嬫満鐨勫瓨鍌ㄥ櫒瑕佹弧瓒宠姹�,鑷冲皯闇€瑕佸嚑绉嶇被鍨嬬殑瀛樺偍鍣�?姣忕瀹归噺鏈夊澶�? |
[绛旓細James] |
1. Entry level mobile phone
32+8M, NOR+PSRAM
2. 2/2.5G middle level mobile phone
128+32/256+64M, NOR+PSRAM
3. 2.5G/3G high end moible phone
128+32M NOR+PSRAM, plus 512/1G NAND |
[2006-5-17 10:48:13] |
[闂細wangdangwi] |
is st flash compatible with amd
flash and intel strataflash both in pin_list and command set? |
[绛旓細Benny] |
ST "s product is compatibile with intel from Software and hardware,account
for 50% share worldwide. however, spansion does not compatibile with us,both
SW and HW. |
[2006-5-17 10:48:18] |
[闂細andypclau] |
As NOR can be used for program and data, why
to use NOR MCP rather than NOR standalone chip in mobile application? |
[绛旓細Benny] |
To select NOR MCP is to save the room for PCB board and easier to design
and purchasing from market.thanks |
[2006-5-17 10:50:15] |
[闂細dafei] |
LPSDRAM鍜孭SRAM,涓よ€呮湁浣曚笉鍚�?鍚屾牱瀹归噺鐨勪环鏍煎浣�? |
[绛旓細James] |
The main diffence is interface.
LPSDRAM is DRAM interface.
PSRAM is SRAM interface. |
[2006-5-17 10:50:58] |
[闂細johnren] |
鍙﹀鎵€璋撶殑鍦ㄥ竷绾挎椂鏁版嵁鍜屽湴鍧€鎬荤嚎鍙竴绛夋晥浜ゆ崲鐨勫師鍒欐槸浠€涔堬紵 |
[绛旓細Gavin] |
NOR鏁版嵁锛屽湴鍧€鎬荤嚎鏄垎寮€鐨勶紝闇€瑕佹敞鎰忕殑鏄痜lash鐨勬暟鎹搴﹀拰cpu鏁版嵁瀹界殑鐨勫尮閰嶃€� |
[2006-5-17 10:51:10] |
[闂細zw168] |
璇烽棶鍦ㄦ墜鏈轰笂娴佺晠鍦版挱鏀捐棰戝浘鍍�,鎵€闇€鐨勫瓨鍌ㄥ櫒鑷冲皯鏈夊澶�?瀹冨拰澶勭悊鍣ㄧ殑澶勭悊閫熷害鏈夊叧鍚�? |
[绛旓細Champion] |
For vedio play, you can use NOR burst read mode for high data throughtput.
For ST 90nm NOR flash, its Burst Mode Frequency:108/133 MHz and its write
throughput with 700KB/sec.
It largely depends on Baseband"s processing speed capbility.
For memory density, 256Mbit/512Mbit and even 1Gbit NOR is ok for this
type data stream. |
[2006-5-17 10:53:23] |
[闂細daicm] |
鎹О3G鎵嬫満鐨勫瓨鍌ㄥ櫒閰嶇疆涓庣數鑴戜竴鏍�,閭e浣曡В鍐冲瓨鍌ㄥ櫒鐨勫姛鑰楅棶棰�? |
[绛旓細Gavin] |
3G鎵嬫満鐨勫瓨鍌ㄦ槸浠OR/NAND flash涓哄熀纭€鐨勶紝杩欐槸闈炲父閫傚悎鎵嬫寔璁惧鐨勮В鍐虫柟妗堛€備綆鍔熻€楁槸鍏惰璁$殑棣栬鐩爣涔嬩竴銆�
鑰岀數鑴戠殑鐩爣鏄€ц兘鑰屼笉鏄姛鑰楋紝鎵€浠ラ噰鐢╠ram鍜宒isk鐨勬柟寮忋€備袱鑰呮槸涓嶅悓鐨勩€� |
[2006-5-17 10:53:37] |
[闂細yangss2006] |
閭d箞璇烽棶锛屼綘浠殑鍒涙柊鍦ㄥ摢閲岋紵 |
[绛旓細Benny] |
锛筹即鐨勫垱鏂板湪浜庢垚鍔熺殑寮€鍙戯辑锛迹鎶€鏈互鍙婂厛杩涚殑鐢熶骇鎶€鏈紝骞朵笖鍚屾椂鎷ユ湁锛集锛蹭笌锛肌锛激鏂规涓烘墜鏈哄鎴锋渶澶ч檺搴︾殑鎻愪緵閫夋嫨鐨勭┖闂翠笌鏂规 |
[2006-5-17 10:55:35] |
[闂細frogfeng] |
NOR闂瓨鍜孨AND闂瓨鍚勬湁浼樼偣,ST鏈夋棤璁″垝鎶婅繖涓よ€呴泦鎴愬湪涓€璧�? |
[绛旓細Benny] |
鐩墠姝e湪鍋氬競鍦鸿鍒掍腑锛屽湪鏈潵锛筹即寰堟湁鍙兘浼氬皢淇╄€呯粨鍚堝湪涓€璧凤紟璋㈣阿 |
[2006-5-17 10:58:17] |
[闂細chen903wei] |
ST鐨凬OR闂瓨,闄や簡鍦ㄦ墜鏈轰笂搴旂敤,杩樼敤鍦ㄤ粈涔堝湴鏂�? |
[绛旓細James] |
Set Top Box, TV, ADSL, Printer, Industry, Bluetooth, PC BIOS, Basestation,
etc. |
[2006-5-17 10:58:22] |
[闂細daicm] |
ST鐨勫瓨鍌ㄥ櫒鏄惁鏀寔3G鐨勪笁涓爣鍑�(TD-SCDMA銆乄CDMA涓嶶MTS)? |
[绛旓細James] |
Yes. ST memory( NOR MCP and NAND MCP ) can be used for TD-SCDMA, WCDMA
handsets. |
[2006-5-17 11:00:51] |
[闂細zw168] |
璇蜂粙缁峂CP鍜孭OP鏈変粈涔堜笉鍚�?閭g杈冧负鍏堣繘? |
[绛旓細Champion] |
For MCP: NOR+SRAM/PSRAM, NAND+LPSDRAM, (2 dies or 3 dies), 3+ dies are
not optimal.
For POP: Package-on-Package, memory+logic,industory moving in this direction,most
cost-effective and compromising solution. |
[2006-5-17 11:01:09] |
[闂細ttmm] |
澶氬獟浣撴墜鏈虹殑瀛樺偍鍣ㄩ噰鐢ㄧ殑鏄疐ALSH?杩樻槸EEPROM鐨勫瓨鍌ㄥ櫒?鏄覆琛屽彛?杩樻槸骞惰鍙g殑鏁版嵁浼犺緭? |
[绛旓細Gavin] |
鎵嬫満閲囩敤鏄疐LASH锛屽洜涓篎LASH鍜孍EPROM鐩告瘮鏈夋洿楂樼殑瀹归噺/浠锋牸姣斻€侲EPROM浣跨敤浜庡弬鏁板瓨鍌紝鍥犱负姣廱it鐨勪环鏍兼瘮杈冮珮銆�
flash鏄苟琛岀殑鏁版嵁浼犺緭锛屾爣鍑嗙殑涓夋€荤嚎缁撴瀯锛圕ontrl bus锛宒ata bus锛宎ddress bus锛夈€� |
[2006-5-17 11:01:52] |
[闂細foxyfox] |
璇烽棶涓撳,鎮ㄥ涓夋槦鐨凮neNAND瀛樺偍鍣ㄦ湁浣曡瘎浠�?鑳芥浛浠OR鍚�? |
[绛旓細Benny] |
涓夋槦鐨凮neNAND瀛樺偍鍣ㄤ細鏄瘮杈冨垱鏂扮殑浜у搧锛屼絾涓汉瑙傜偣璁や负鐢变簬浜у搧鎺ㄥ嚭鏃堕棿鐭紝甯傚満鎴愮啛搴︿笉澶燂紝澶у鏁扮殑鎵嬫満瀹㈡埛涓嶆効鎵挎媴椋庨櫓涓旀病鏈夊吋瀹规€ч€夋嫨锛屽姞涓婁笁鏄熸湰韬篃鏄墜鏈哄埗閫犲晢锛屾墍浠ュ苟涓嶈兘濞佽儊鍒帮籍锛疾銆€
锛︼棘锛★汲锛ㄧ殑甯傚満 |
[2006-5-17 11:04:03] |
[闂細zhangwq] |
ST M29W160鐨勪环浣嶈兘鏈変笅闄嶇┖闂村悧? |
[绛旓細James] |
What is the current price you have gotten?
What is your targeted price?
What is application? |
[2006-5-17 11:04:34] |
[闂細foxyfox] |
3G鎵嬫満鏈夎澶氭柊鍔熻兘濡傚濯掍綋MMS,楂樻竻鐩告満,鐩稿唽,娴佽棰�,MPEG-4瑙嗛,MP3鍜岄煶棰戜互鍙�3D娓告垙,Java搴旂敤鍜學eb娴忚绛�,NOR闂瓨宸蹭笉澶熺敤,濡傛灉閫夌敤NAND闂瓨,杩欐湁浣曞尯鍒�?瑕佹敞鎰忎粈涔堥棶棰�? |
[绛旓細Gavin] |
瀵�!NAND 瓒婃潵瓒婂鐨勭敤浜庤繖浜涢鍩燂紝鍥犱负NAND鐨勫閲忔瘮NOR澶у緢澶氾紝锛堢幇鍦ㄦ渶楂�32Gb锛夈€�
浠锋牸涔熸洿渚垮疁銆侼AND 鐨勬帴鍙e拰NOR涓嶅悓锛孨AND鏈夊潖鍧楋紝闇€瑕佺殑杞欢鏀寔姣擭OR澶嶆潅銆�
鎮ㄥ彲浠ヤ笅杞絊T 鐨凬AND flash鐨刣atasheet浜嗚В鏇村淇℃伅銆� |
[2006-5-17 11:04:53] |
[闂細druidmu] |
ST鏈夋棤鎵嬫満闂瓨鍗�?瀹归噺鏈夊澶�? |
[绛旓細Benny] |
锛筹即鍦ㄩ棯瀛樺崱涓婂彧鏈夐檺鐨勮繘琛屾帹骞匡紝闈炲父鎶辨瓑 |
[2006-5-17 11:06:27] |
[闂細johnren] |
瀛樺偍鍣ㄤ腑鐨凚ANK鏄浣曞畾涔夌殑 |
[绛旓細Champion] |
For NOR flash, several blocks groups as a bank. Its size depends on
different memory type/density. Of course, it also has the concept of parameter
bank and main bank. For example, 8Mbit Bank or 16Mbit Bank,ect.
For Due Bank flash, read-while-write due bank operation can performed. |
[2006-5-17 11:07:00] |
[闂細narrator] |
鎵嬫満鑺墖鎴愭湰涓棯瀛樼害鍗犲澶х殑姣斾緥? |
[绛旓細Benny] |
鐩墠骞冲潎鐨勬瘮渚嬪ぇ绾︼紪锛咃紞锛欙紖锛岃阿璋� |
[2006-5-17 11:08:32] |
[闂細cmqpostee] |
FLASH椹卞姩瀵逛簬瀹㈡埛鏉ヨ锛佹湁闅惧害娌℃湁锛熸槸浣犱滑鎻愪緵鐩稿簲鐨勯┍鍔紵杩樻槸瀹㈡埛鑷繁缂栧啓锛� |
[绛旓細Champion] |
It"s easy for customer to develop Flash driver. Of course, ST can provide
this. Customer can reuse it for their own purpose. |
[2006-5-17 11:08:55] |
[闂細fsqiu] |
璇疯缁嗕粙缁峉T鐨勫姞瀵哊OR闂瓨(Krypto)鐨勪富瑕佹€ц兘濡侱ES浠ュ強浠锋牸绛�. |
[绛旓細Gavin] |
krypto涓昏鐢ㄤ簬STB棰嗗煙銆�
krypto鎻愪緵浜嗭細
1銆傝淇濇姢
2銆傞潪鏄撳け鎬т繚鎶�
3銆侰PU 鍜宖lash鐩镐簰閴存潈銆�
des绠楁硶鏄竴涓爣鍑嗙殑鍔犲瘑锛岃В瀵嗙畻娉曪紝鏈変簺CPU鏈夌‖浠跺仛杩欎釜宸ヤ綔銆傚叿浣撶畻娉曞彲浠ュ弬鑰冪浉搴旂殑绠楁硶浠嬬粛銆� |
[2006-5-17 11:10:57] |
[闂細foxyfox] |
3G鎵嬫満涓湁澶氱瀛樺偍鍣�,瀛樺偍鍣ㄦ帴鍙e簲璇ュ浣曞疄鐜�?鏈夎В鍐虫柟妗堝悧? |
[绛旓細Champion] |
For the memory used in 3G Mobile, NAND+LPSDRAM, NOR+LPSDRAM....
ST this type memory has been qualified by many 3G mobile phone flatform.
We ST already has such slotion. |
[2006-5-17 11:12:35] |
[闂細ttmm] |
璇烽棶涓撳,NOR浠€涔堟牱鏃跺€欎細鏈夌粺涓€鐨勬爣鍑�? |
[绛旓細Benny] |
鐩墠鐨勬爣鍑嗕富娴侊紝宸茬粡鍙互鍒嗕负锛岋汲锛达紗INTEL锛堬紩锛愶紖share) 鍜孲PANSION 鍜屽叾浠�,鎵€浠ュ凡缁忔瘮杈冪畝鍗曟槑浜嗭紟璋㈣阿 |
[2006-5-17 11:14:08] |
[闂細foxyfox] |
鎵嬫満瀛樺偍鍣ㄧ殑鍙戝睍瓒嬪娍鏄綆鍔熻€楀拰楂樺瘑搴�,ST鍦ㄨ繖涓ゆ柟闈㈡湁鍜岀嫭鍒颁箣澶�?鐩稿簲鐨勪骇鍝佹槸浠€涔�? |
[绛旓細James] |
512Mb NOR + 128Mb PSRAM is good solution to balance low power consumption
and high desity solution. |
[2006-5-17 11:14:59] |
[涓绘寔浜猴細ChinaECNet] |
鍚勪綅瑙備紬锛岀幇鍦ㄧ敤鎴锋彁闂緢韪婅穬锛屼笓瀹舵鍦ㄩ€愪竴鍥炵瓟銆傝鑰愬績绛夊緟鎮ㄩ棶棰樼殑绛旀锛屽悓涓€闂璇蜂笉瑕佸娆℃彁浜ゃ€� |
[2006-5-17 11:16:28] |
[闂細dafei] |
鐩墠ST鐨凬AND闂瓨鏈€澶у閲忚兘鍋氬埌澶氬ぇ?鍦ㄥ競鍦轰笂鐨勭珵浜夊姏濡備綍? |
[绛旓細James] |
4Gb NAND has been mass production, which is competitive in some segments. |
[2006-5-17 11:17:44] |
[闂細narrator] |
璇烽棶鎵嬫満鐢佃涓噰鐢ㄩ偅绉嶅瓨鍌ㄥ櫒?瀹归噺搴旇鏈夊澶�? |
[绛旓細James] |
1Gb NAND + 256Mb LPSDRAM. |
[2006-5-17 11:18:34] |
[闂細tannianbo] |
ST鐨凬OR鍜孨AND闂瓨璇�/鍐欓€熺巼鏈夊蹇�? |
[绛旓細Gavin] |
璇伙細
NOR--70ns锛�90ns
NAND--25us
鍐欙細
NOR--5us/byte
NAND--0.5us/byte |
[2006-5-17 11:18:52] |
[闂細mfkd3335] |
鑳藉憡璇夋垜鐜板湪甯傚満涓婄殑鎵嬫満,鍝釜鐗屽瓙鐨勫摢绉嶅瀷鍙风殑鐢ㄧ殑ST鐨勬柟妗堝悧? |
[绛旓細Benny] |
ST鐨凢LASH鐨勭洰鍓嶅箍娉涚敤浜嶯OKIA,MOTO,LG,SAMSUNG 绛夊浗闄呭巶瀹讹紝鍥藉唴鍖呮嫭锛缉锛诧激锛岋绩锛★缉锛ワ疾锛屽湪鍐呯殑瀹㈡埛閮藉湪杩涜骞挎硾鍚堜綔 |
[2006-5-17 11:23:43] |
[闂細zxjha] |
璇烽棶锛氭甯稿伐浣滃姛鑰楁湁澶氬ぇ锛� |
[绛旓細Gavin] |
nor鍜宯and宸ヤ綔鏄數娴佸ぇ绾�100mA銆�
寰呮満鐘舵€佷笅澶х害涓猴細100uA |
[2006-5-17 11:25:05] |
[闂細hanker_chen] |
What"s the marketing trends for NOR FLASH
and NAND FLASH?betwwen tat |
[绛旓細Benny] |
NOR Flash still will account for 92% share in Mobile phone application,
NAND Flash will will embeded also together with CARD solution to enlarge
storage for multimedia ,camera etc.
thanks |
[2006-5-17 11:27:20] |
[闂細elmer] |
鍦ㄥ鐢典笂鏄惁鏈夊簲鐢紵涓昏鐢ㄩ€旀槸浠€涔堬紵 |
[绛旓細James] |
NOR Flash can be used for Digital TV, Set Top Box need, high end IP
phone, ADSL modem, etc. |
[2006-5-17 11:28:20] |
[闂細fsqiu] |
ST鍦ㄦ墜鏈篠IM鍗′笂鏈変綍绉嶄骇鍝�?浠锋牸濡備綍? |
[绛旓細Benny] |
寰堟姳姝夛紝鎮ㄧ殑闂鎴戜細淇濈暀锛岃锛筹即涓撻棬璐熻矗锛筹辑锛★疾锛达迹锛★疾锛ら儴闂ㄥ悓浜嬭繘琛屽洖绛� |
[2006-5-17 11:30:21] |
[闂細jx882003] |
璇烽棶锛屾墜鏈哄簲鐢ㄦ椂鍙兘閬囧埌鐨勫疄鏃朵俊鎭瓨鍌紝鍦ㄥ濯掍綋鎵嬫満涓槸濡備綍瑙e喅鐨勶紵 |
[绛旓細Champion] |
Real-time storage is very important to multimedia mobile phone. Video
download using NOR : Multibank flashj can use due bank operation for high
speed throughput and No delay between read and write operations. |
[2006-5-17 11:34:25] |
[闂細crazycake] |
鎴戞兂闂棶浣犱滑鐨�90nm鐨凬orFLASH锛屽畠鐨勪环鏍煎湪甯傚満鏈夋病鏈夌珵浜夊姏銆傚洜涓哄鏋滀环鏍间笂姣�.13鐨勭浉宸お澶氾紝涔熻鐭湡鍐呭緢灏戞湁浜哄洖鍘诲啋闄┿€� |
[绛旓細Benny] |
璋㈣阿鎮ㄧ殑寤鸿锛岀洰鍓嶅浗鍐呭凡缁忔湁澶氬瀹㈡埛閫夌敤浜嗘垜浠�90nm鐨勪骇鍝侊紝鍦ㄦ垚鏈笂宸茬粡鏈夌浉褰撶殑浼樺娍锛� |
[2006-5-17 11:38:27] |
[闂細hanker_chen] |
NOR+LPSDRAM涓昏鐢ㄥ湪浠€涔堝簲鐢ㄤ笂锛� |
[绛旓細Benny] |
鐩墠涓昏搴旂敤浜庢墜鏈哄簲鐢ㄤ笂 |
[2006-5-17 11:38:54] |
[涓绘寔浜猴細ChinaECNet] |
鎵€鏈夐棶棰樺潎宸叉彁浜ょ粰ST鍏徃鐨勪笓瀹躲€傚骇璋堟湡闂存湭鍥炵瓟鐨勯棶棰橈紝ST鍏徃涓撳涔熶細閫愪竴鍥炵瓟锛屽苟鍦ㄤ腑鐢电綉涓婂叕甯冿紝璇峰ぇ瀹舵敞鎰忔敹鐪嬨€� |
[2006-5-17 11:42:12] |
[闂細fzhuo] |
ST鎻愪緵NAND闂瓨鍚�?濡傛灉鏈�,鑳戒妇鍑轰簺鍨嬪彿鍚�? |
[绛旓細Kevin] |
40454: ST鎻愪緵NAND闂瓨鍚�?濡傛灉鏈�,鑳戒妇鍑轰簺鍨嬪彿鍚�?
Yes,we offer NAND Flash to market:
desity from 128Mb to 8Gb now.
For Package , we can offer TSOP and BGA type.
Part number ,just name a few as follows:
128Mb TSOP: NAND128W3A2BN6E
256Mb TSOP: NAND256W3A2BN6E
512Mb TSOP: NAND512W3A2BN6E
1Gb TSOP: NAND01GW3B2AN6E
Others like 2Gb/4Gb/8Gb ... |
[2006-5-17 11:43:14] |
[闂細mahatma] |
涓轰粈涔圫T鐨凬OR鍜孨AND闂瓨璇�/鍐欓€熺巼宸埆浼氳繖涔堝ぇ鍛�?
璇�: NOR 70ns NAND 25ns
鍐�: NOR 5us/byte NAND 0.5us/byte
鐞嗚涓婃潵璇�, NAND鍐欐椂闂村簲璇ュぇ浜庤鏃堕棿鐨� |
[绛旓細Champion] |
Maybe you misunderstand what I said just now.
NAND Read speed,
Initial/random access: 12us(page read)
Sequential access: 50ns.
NOR Read speed,
Initial/random access: ~70/85/90ns.
Sequential access: ~14ns (burst mode), 20/25ns (page mode). |
[2006-5-17 11:43:59] |
[闂細zhangwq] |
鎴戜滑鐨凙TA浜у搧浣跨敤M29W160,浠蜂綅楂�,鑳藉惁鍛婄煡鍦ㄩ偅鐢宠鍒板ソ鐨勪环浣�? |
[绛旓細James] |
Where you bought ST M29W160? |
[2006-5-17 11:45:26] |
[闂細fsqiu] |
ST鐨凬AND闂� 瀛�+LPSDRAM MCP鏈夐偅浜涘瀷鍙�?瀹归噺鍜屼环鏍煎浣�? |
[绛旓細Kevin] |
We have plan for NAND+LPSDRAM: density ranging from 256Mb+256Mb,512Mb+256Mb,512Mb+512Mb,1Gb+512Mb,2Gb+512Mb.
For detailed product status and price information ,please contact our
local sales office. |
[2006-5-17 11:46:14] |
[闂細wliush] |
LPSDRAM鏄粈涔堝瓨鍌ㄥ櫒? |
[绛旓細Benny] |
LOW POWER SDRAM |
[2006-5-17 11:47:29] |
[涓绘寔浜猴細ChinaECNet] |
鐢变簬鏃堕棿鍏崇郴锛屾湰娆′腑鐢电綉鈥滃湪绾垮骇璋堚€濋┈涓婂氨瑕佺粨鏉熶簡銆傝櫧鐒跺悇浣嶅惉浼楋紙缃戝弸锛夊凡涓嶴T鍏徃鐨勪笓瀹惰璁轰簡璁稿闂锛屼絾鏄繕鏈夎澶氭彁闂病鏈夋潵寰楀強杩涜浜ゆ祦銆傛湰娆″湪绾垮骇璋堢粨鏉熷悗锛屼腑鐢电綉灏嗚ST鍏徃鐨勪笓瀹剁户缁瓟澶嶆墍鏈夌殑鏉ヨ嚜鍚勪綅鍚紬锛堢綉鍙嬶級鐨勬彁闂紝鐒跺悗鏁寸悊涓婅浇鍒颁腑鐢电綉缃戠珯涓婏紝浠ヤ究澶у鏌ラ槄銆� |
[2006-5-17 11:47:44] |
[涓绘寔浜猴細ChinaECNet] |
鍦ㄦ锛屼腑鐢电綉鐗瑰埆鎰熻阿缁欎簣鏈涓數缃戝湪绾垮骇璋堝法澶ф敮鎸佺殑ST鍏徃锛岀壒鍒劅璋笓闂ㄥ湪绾垮洖绛斿悇浣嶅惉浼楋紙缃戝弸锛夋彁闂殑ST鍏徃鐨勫悇浣嶄笓瀹朵滑锛岀壒鍒劅璋㈠悇浣嶅惉浼楋紙缃戝弸锛夌Н鏋佺儹鎯呯殑鍙備笌銆� |
[2006-5-17 11:48:02] |
[闂細mahatma] |
濂借薄SAMSUNG鐜板湪宸茬粡瀹e竷閲忎骇49nM鐨凬AND浜�,ST鑵垮嚭65nM鍏锋湁浠€涔堟牱鐨勬湁鍔涚珵浜変紭鍔�? |
[绛旓細Kevin] |
Thanks for your information.
ST has a aggressive shrink plan on NAND,from 90,70nm,to 65nm and 50nm
in roadmap. This will help to allow higher density and cost effectiveness
to our customers. |
[2006-5-17 11:51:11] |
[涓绘寔浜猴細ChinaECNet] |
绁濆ぇ瀹朵簨涓氭湁鎴愩€佺敓娲绘剦蹇紒娆㈣繋澶氭彁瀹濊吹鎰忚锛屾杩庡叧娉ㄤ腑鐢电綉锛屼笅娆″啀瑙併€� |
[2006-5-17 11:55:02] |
[闂細chpeng81] |
3G鎵嬫満闇€瑕佺Щ鍔ㄥ瓨鍌ㄥ澶氬獟浣撳崱,SD鍗$瓑,璇烽棶ST鍦ㄨ繖鏂归潰鑳芥彁渚涗粈涔堟牱鐨勪骇鍝�?鑳借缁嗕粙缁嶄竴涓嬪悧? |
[绛旓細Kevin] |
Thanks for your question.
To serve SD card market for mobile phone,currently we mainly offer NAND
chips to Flash card customers/partners.
For SD card itself,as we are independent semiconductor supplier,we are
not offering SD card to mass market with ST brand. |
[2006-5-17 11:57:20] |
[闂細frogfeng] |
鏀寔3G鎵嬫満搴旂敤澶勭悊鍣ㄧ殑瀛樺偍鍣ㄤ富瑕佹湁閭e嚑绉嶇被鍨�?ST鎻愪緵閭d簺?鏈夊瀷鍙峰悧? |
[绛旓細Kevin] |
Our NAND+LPSDRAM is one of the key memory offer for 3G application,currently
density from 256Mb+256Mb to 1Gb+512Mb, while 2Gb+512Mb and 4Gb+512Mb are
in our roadmap as well.
Please contact our local Sales office for more information. |
[2006-5-17 12:00:41] |
[闂細hanker_chen] |
鐩墠鎵嬫満瀛樺偍鍣ㄦ槸鍒剁害鎵嬫満鎴愭湰鐨勪竴涓噸瑕佸洜绱�,鑰岄煶涔愭墜鏈洪渶瑕佸ぇ瀹归噺鐨勫瓨鍌ㄧ郴缁熷仛鏀拺,ST鏈夎繖鏍风殑浜у搧鍚�?浠锋牸濡備綍? |
[绛旓細Kevin] |
NAND Flash and Card(SD/MMC/TFlash...) are popular solution for data
storage system in mobile.
we are offering NAND Flash for mobile application,and music phone is one
of the key targets.
For mobile phone,we can provide NAND density from 256Mb to 2Gb, in both
TSOP and BGA package. |
[2006-5-17 12:04:56] |
[闂細mahatma] |
ST鐨凬AND闂瓨鍙摝鍐欏灏戞?
鍦ㄦ棤鍧忓尯鐨勬儏鍐典笅 |
[绛旓細Kevin] |
100,000times for erase and program |
[2006-5-17 12:09:47] |
[闂細charlicheng] |
LPSDRAM鍜孭SRAM,涓よ€呮湁浣曚笉鍚�?鍚屾牱瀹归噺鐨勪环鏍煎浣�? |
[绛旓細Kevin] |
they have different core, LPSDRAM has higher density than PSRAM and
higher power consumption.
price is lower than psram |
[2006-5-17 12:10:59] |